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| Philips Semiconductors Product specification Three quadrant triacs high commutation GENERAL DESCRIPTION Passivated high voltage, high commutation triac in a full pack, plastic envelope. This triac is intended for use in motor control circuits where high blocking voltage, high static and dynamic dV/dt and high dI/dt can occur. This device will commutate the full rated rms current at the maximum rated junction temperature, without the aid of a snubber. BTA208X-1000B QUICK REFERENCE DATA SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. 1000 8 65 UNIT V A A PINNING - SOT186A PIN 1 2 3 DESCRIPTION main terminal 1 PIN CONFIGURATION case SYMBOL T2 main terminal 2 gate 123 T1 case isolated G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current full sine wave; Ths 73 C full sine wave; Tj = 25 C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/s CONDITIONS MIN. MAX. 1000 8 UNIT V A I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature - 65 71 21 100 2 5 5 0.5 150 125 A A A2s A/s A V W W C C over any 20 ms period -40 - August 2003 1 Rev 1.000 Philips Semiconductors Product specification Three quadrant triacs high commutation ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 C unless otherwise specified SYMBOL Visol PARAMETER R.M.S. isolation voltage from all three terminals to external heatsink CONDITIONS f = 50-60 Hz; sinusoidal waveform; R.H. 65% ; clean and dustfree MIN. - BTA208X-1000B TYP. - MAX. 2500 UNIT V Cisol Capacitance from T2 to external f = 1 MHz heatsink - 10 - pF THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS full or half cycle with heatsink compound without heatsink compound in free air MIN. TYP. 55 MAX. 4.5 6.5 UNIT K/W K/W K/W STATIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL IGT PARAMETER Gate trigger current 1 CONDITIONS VD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GT2+ G+ T2+ GT2- G- MIN. 2 2 2 0.25 - TYP. 18 21 34 31 34 30 31 1.3 0.7 0.4 0.1 MAX. 50 50 50 60 90 60 60 1.65 1.5 0.5 UNIT mA mA mA mA mA mA mA V V V mA IL Latching current VD = 12 V; IGT = 0.1 A IH VT VGT ID Holding current On-state voltage Gate trigger voltage Off-state leakage current VD = 12 V; IGT = 0.1 A IT = 10 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 C VD = VDRM(max); Tj = 125 C DYNAMIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL dVD/dt dIcom/dt tgt PARAMETER Critical rate of rise of off-state voltage Critical rate of change of commutating current Gate controlled turn-on time CONDITIONS VDM = 67% VDRM(max); Tj = 125 C; exponential waveform; gate open circuit VDM = 400 V; Tj = 125 C; IT(RMS) = 8 A; without snubber; gate open circuit ITM = 12 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/s MIN. 1000 15 TYP. 4000 38 2 MAX. UNIT V/s A/ms s 1 Device does not trigger in the T2-, G+ quadrant. August 2003 2 Rev 1.000 Philips Semiconductors Product specification Three quadrant triacs high commutation BTA208X-1000B 12 10 Ptot / W Ths(max) / C 71 = 180 120 1 10 IT(RMS) / A BT137X 80 89 90 60 30 8 73 C 8 6 4 2 0 6 98 4 107 116 125 10 2 0 2 4 6 IT(RMS) / A 8 0 -50 0 50 Ths / C 100 150 Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where = conduction angle. ITSM / A Fig.4. Maximum permissible rms current IT(RMS) , versus heatsink temperature Ths. IT(RMS) / A 1000 25 20 dI T /dt limit 100 15 10 IT T 10 10us I TSM time 5 Tj initial = 25 C max 100us 1ms T/s 10ms 100ms 0 0.01 0.1 1 surge duration / s 10 Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp 20ms. ITSM / A IT T ITSM time Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Ths 73C. VGT(Tj) VGT(25 C) 80 70 60 50 40 30 1.6 1.4 1.2 1 0.8 Tj initial = 25 C max 20 10 0.6 0.4 -50 0 1 10 100 Number of cycles at 50Hz 1000 0 50 Tj / C 100 150 Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25C), versus junction temperature Tj. August 2003 3 Rev 1.000 Philips Semiconductors Product specification Three quadrant triacs high commutation BTA208X-1000B 3 2.5 2 1.5 IGT(Tj) IGT(25 C) T2+ G+ T2+ GT2- G- 25 IT / A Tj = 125 C Tj = 25 C 20 typ Vo = 1.264 V Rs = 0.0378 Ohms max 15 10 1 5 0.5 0 -50 0 0 50 Tj / C 100 150 0 0.5 1 1.5 VT / V 2 2.5 3 Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25C), versus junction temperature Tj. IL(Tj) IL(25 C) Fig.10. Typical and maximum on-state characteristic. 10 Zth j-hs (K/W) with heatsink compound without heatsink compound unidirectional bidirectional 3 2.5 1 2 1.5 1 0.5 0 -50 0.01 10us 0.1ms 1ms 0.1 P D tp t 0 50 Tj / C 100 150 10ms tp / s 0.1s 1s 10s Fig.8. Normalised latching current IL(Tj)/ IL(25C), versus junction temperature Tj. IH(Tj) IH(25C) Fig.11. Transient thermal impedance Zth j-hs, versus pulse width tp. 3 2.5 1000 dIcom/dt (A/ms) typ 2 1.5 1 0.5 0 -50 100 min 10 1 0 50 Tj / C 100 150 20 40 60 80 100 140 120 Tj / C Fig.9. Normalised holding current IH(Tj)/ IH(25C), versus junction temperature Tj. Fig.12. Typical, critical rate of change of commutating current dIcom/dt versus junction temperature. August 2003 4 Rev 1.000 Philips Semiconductors Product specification Three quadrant triacs high commutation MECHANICAL DATA Dimensions in mm Net Mass: 2 g 10.3 max 3.2 3.0 BTA208X-1000B 4.6 max 2.9 max Recesses (2x) 2.5 0.8 max. depth 2.8 6.4 seating plane 15.8 max 15.8 max. 3 max. not tinned 19 max. 3 2.5 13.5 min. 1 0.4 M 2 3 1.0 (2x) 0.6 2.54 0.5 2.5 1.3 0.9 0.7 5.08 Fig.13. SOT186A; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". August 2003 5 Rev 1.000 Philips Semiconductors Product specification Three quadrant triacs high commutation BTA208X-1000B DEFINITIONS DATA SHEET STATUS DATA SHEET STATUS2 Objective data PRODUCT STATUS3 Development DEFINITIONS This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A Preliminary data Qualification Product data Production Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 2 Please consult the most recently issued datasheet before initiating or completing a design. 3 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. August 2003 6 Rev 1.000 |
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